SI7156DP-T1-E3 - MOSFET N-CH 40V 50A PPAK SO-8

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SI7156DP-T1-E3

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ABC-SI7156DP-T1-E3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 40V 50A PPAK SO-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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ABC Semiconductor on SI7156DP-T1-E3 laos müüa.

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spetsifikatsioonid SI7156DP-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7156DP-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 40V 50A PPAK SO-8

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 50A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 3.5 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 155nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6900pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 5.4W (Ta), 83W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SO-8

Pakett / kohver : PowerPAK® SO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI71 , SI7156D

dokumendid SI7156DP-T1-E3

andmelehe : SI7156DP-T1-E3.pdf

Seotud tooted SI7156DP-T1-E3 Vishay Siliconix

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