STB18N60DM2 - MOSFET N-CH 600V 12A

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STB18N60DM2

Sisemine osa number

ABC-STB18N60DM2

tootja

STMicroelectronics

Lühikirjeldus

MOSFET N-CH 600V 12A

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

440272 Pieces

Viide Hind

~~USD 0.743455~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on STB18N60DM2 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid STB18N60DM2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : STB18N60DM2

tootja : STMicroelectronics

kirjeldus : MOSFET N-CH 600V 12A

seeria : MDmesh™ DM2

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 295 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20nC @ 10V

VG (maksimaalselt) : ±25V

Sisendmahtuvus (Ciss) (Max) @ Vds : 800pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 90W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D2PAK

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : STB , STB18

dokumendid STB18N60DM2

andmelehe : STB18N60DM2.pdf

Seotud tooted STB18N60DM2 STMicroelectronics

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