SI3451DV-T1-GE3 - MOSFET P-CH 20V 2.8A 6-TSOP

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SI3451DV-T1-GE3

Sisemine osa number

ABC-SI3451DV-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 2.8A 6-TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

77940 Pieces

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ABC Semiconductor on SI3451DV-T1-GE3 laos müüa.

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spetsifikatsioonid SI3451DV-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3451DV-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 2.8A 6-TSOP

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 115 mOhm @ 2.6A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 5.1nC @ 5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 250pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 1.25W (Ta), 2.1W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-TSOP

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI345 , SI3451D

dokumendid SI3451DV-T1-GE3

andmelehe : SI3451DV-T1-GE3.pdf

Seotud tooted SI3451DV-T1-GE3 Vishay Siliconix

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