SI2316BDS-T1-GE3 - MOSFET N-CH 30V 4.5A SOT23-3

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SI2316BDS-T1-GE3

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ABC-SI2316BDS-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 4.5A SOT23-3

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Pliivaba / RoHS Vastavuses

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1-2 päeva

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spetsifikatsioonid SI2316BDS-T1-GE3

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Osa number : SI2316BDS-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 4.5A SOT23-3

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 4.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 50 mOhm @ 3.9A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9.6nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 350pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 1.25W (Ta), 1.66W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3 (TO-236)

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI231 , SI2316BD

dokumendid SI2316BDS-T1-GE3

andmelehe : SI2316BDS-T1-GE3.pdf

Seotud tooted SI2316BDS-T1-GE3 Vishay Siliconix

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