SIHH100N60E-T1-GE3 - MOSFET E SERIES 600V POWERPAK 8X

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SIHH100N60E-T1-GE3

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ABC-SIHH100N60E-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET E SERIES 600V POWERPAK 8X

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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194128 Pieces

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~~USD 1.926925~~

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ABC Semiconductor on SIHH100N60E-T1-GE3 laos müüa.

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spetsifikatsioonid SIHH100N60E-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHH100N60E-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET E SERIES 600V POWERPAK 8X

seeria : E

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 28A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 100 mOhm @ 13.5A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 53nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1850pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 174W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 8 x 8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHH10 , SIHH100N6

dokumendid SIHH100N60E-T1-GE3

andmelehe : SIHH100N60E-T1-GE3.pdf

Seotud tooted SIHH100N60E-T1-GE3 Vishay Siliconix

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