A2G35S200-01SR3 - AIRFAST RF POWER GAN TRANSISTOR

Tootja arv

Sisemine osa number

tootja

Lühikirjeldus

AIRFAST RF POWER GAN TRANSISTOR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

38556 Pieces

Viide Hind

~~USD 61.71792~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on A2G35S200-01SR3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : A2G35S200-01SR3

tootja : NXP USA Inc.

kirjeldus : AIRFAST RF POWER GAN TRANSISTOR

seeria : -

Osa olek : Active

Transistori tüüp : LDMOS

Sagedus : 3.4GHz ~ 3.6GHz

Kasum : 16.1dB

Pinge - test : 48V

Praegune hinnang : -

Müra joonis : -

Praegune - test : 291mA

Võimsus : 180W

Pinge - hinnatud : 125V

Pakett / kohver : NI-400S-2S

Tarnija seadme pakett : NI-400S-2S

kaal : -

tingimus : Uus ja originaal

seotud lingid : A2G35 , A2G35S2

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