FQB6N80TM - MOSFET N-CH 800V 5.8A D2PAK

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FQB6N80TM

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ABC-FQB6N80TM

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 800V 5.8A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

465150 Pieces

Viide Hind

~~USD 0.70369~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FQB6N80TM laos müüa.

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spetsifikatsioonid FQB6N80TM

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQB6N80TM

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 800V 5.8A D2PAK

seeria : QFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 5.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.95 Ohm @ 2.9A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 31nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1500pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3.13W (Ta), 158W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQB , FQB6

dokumendid FQB6N80TM

andmelehe : FQB6N80TM.pdf

Seotud tooted FQB6N80TM ON Semiconductor

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