IPW60R099CPAFKSA1 - MOSFET N-CH 650V 31A TO-247

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IPW60R099CPAFKSA1

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ABC-IPW60R099CPAFKSA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 650V 31A TO-247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

111072 Pieces

Viide Hind

~~USD 3.36773~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPW60R099CPAFKSA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPW60R099CPAFKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPW60R099CPAFKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 650V 31A TO-247

seeria : Automotive, AEC-Q101, CoolMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 31A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 105 mOhm @ 18A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 1.2mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 80nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2800pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 255W (Tc)

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO247-3

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPW60 , IPW60R09

dokumendid IPW60R099CPAFKSA1

andmelehe : IPW60R099CPAFKSA1.pdf

Seotud tooted IPW60R099CPAFKSA1 Infineon Technologies

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