FQU13N10LTU - MOSFET N-CH 100V 10A IPAK

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FQU13N10LTU

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ABC-FQU13N10LTU

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ON Semiconductor

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MOSFET N-CH 100V 10A IPAK

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spetsifikatsioonid FQU13N10LTU

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Osa number : FQU13N10LTU

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 10A IPAK

seeria : QFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 180 mOhm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 520pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 40W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : I-PAK

Pakett / kohver : TO-251-3 Short Leads, IPak, TO-251AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQU , FQU13

dokumendid FQU13N10LTU

andmelehe : FQU13N10LTU.pdf

Seotud tooted FQU13N10LTU ON Semiconductor

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