SI8415DB-T1-E1 - MOSFET P-CH 12V 5.3A 2X2 4-MFP

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SI8415DB-T1-E1

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ABC-SI8415DB-T1-E1

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 12V 5.3A 2X2 4-MFP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

77184 Pieces

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ABC Semiconductor on SI8415DB-T1-E1 laos müüa.

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spetsifikatsioonid SI8415DB-T1-E1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI8415DB-T1-E1

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 12V 5.3A 2X2 4-MFP

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 5.3A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 37 mOhm @ 1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 30nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.47W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-Microfoot

Pakett / kohver : 4-XFBGA, CSPBGA

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI84 , SI8415D

dokumendid SI8415DB-T1-E1

andmelehe : SI8415DB-T1-E1.pdf

Seotud tooted SI8415DB-T1-E1 Vishay Siliconix

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