SI7113DN-T1-E3 - MOSFET P-CH 100V 13.2A 1212-8

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SI7113DN-T1-E3

Sisemine osa number

ABC-SI7113DN-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 100V 13.2A 1212-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

439383 Pieces

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~~USD 0.74495~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI7113DN-T1-E3 laos müüa.

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spetsifikatsioonid SI7113DN-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7113DN-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 100V 13.2A 1212-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 13.2A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 134 mOhm @ 4A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 55nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1480pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 3.7W (Ta), 52W (Tc)

Töötemperatuur : -50°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8

Pakett / kohver : PowerPAK® 1212-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI71 , SI7113D

dokumendid SI7113DN-T1-E3

andmelehe : SI7113DN-T1-E3.pdf

Seotud tooted SI7113DN-T1-E3 Vishay Siliconix

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