SISS02DN-T1-GE3 - MOSFET N-CHAN 25V POWERPAK 1212-

Tootja arv

SISS02DN-T1-GE3

Sisemine osa number

ABC-SISS02DN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CHAN 25V POWERPAK 1212-

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

909692 Pieces

Viide Hind

~~USD 0.359815~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SISS02DN-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SISS02DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SISS02DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CHAN 25V POWERPAK 1212-

seeria : TrenchFET® Gen IV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 51A (Ta), 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.2 mOhm @ 15A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 83nC @ 10V

VG (maksimaalselt) : +16V, -12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4450pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 5W (Ta), 65.7W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8S

Pakett / kohver : PowerPAK® 1212-8S

kaal : -

tingimus : Uus ja originaal

seotud lingid : SISS0 , SISS02D

dokumendid SISS02DN-T1-GE3

andmelehe : SISS02DN-T1-GE3.pdf

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