TK18E10K3,S1X(S - MOSFET N-CH 100V 18A TO-220AB

Tootja arv

TK18E10K3,S1X(S

Sisemine osa number

ABC-TK18E10K3,S1X(S

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N-CH 100V 18A TO-220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

552720 Pieces

Viide Hind

~~USD 0.5922~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK18E10K3,S1X(S laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TK18E10K3,S1X(S

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK18E10K3,S1X(S

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N-CH 100V 18A TO-220AB

seeria : U-MOSIV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : -

Rds sees (max) @ id, Vgs : 42 mOhm @ 9A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 33nC @ 10V

VG (maksimaalselt) : -

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : -

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK18E , TK18E10

dokumendid TK18E10K3,S1X(S

andmelehe : TK18E10K3,S1X(S.pdf

Seotud tooted TK18E10K3,S1X(S Toshiba Semiconductor and Storage

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