SIS698DN-T1-GE3 - MOSFET N-CH 100V 6.9A 1212-8

Tootja arv

SIS698DN-T1-GE3

Sisemine osa number

ABC-SIS698DN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 100V 6.9A 1212-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2052190 Pieces

Viide Hind

~~USD 0.1595~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIS698DN-T1-GE3 laos müüa.

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spetsifikatsioonid SIS698DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIS698DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 100V 6.9A 1212-8

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 6.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 195 mOhm @ 2.5A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 210pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 19.8W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8

Pakett / kohver : PowerPAK® 1212-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIS69 , SIS698D

dokumendid SIS698DN-T1-GE3

andmelehe : SIS698DN-T1-GE3.pdf

Seotud tooted SIS698DN-T1-GE3 Vishay Siliconix

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