SQJ500AEP-T1_GE3 - MOSFET N/P CHAN 40V SO8L DUAL

Tootja arv

SQJ500AEP-T1_GE3

Sisemine osa number

ABC-SQJ500AEP-T1_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P CHAN 40V SO8L DUAL

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

935487 Pieces

Viide Hind

~~USD 0.349895~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SQJ500AEP-T1_GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SQJ500AEP-T1_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQJ500AEP-T1_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P CHAN 40V SO8L DUAL

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : N and P-Channel

FET funktsioon : -

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc)

Rds sees (max) @ id, Vgs : 27 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 2.3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 38.1nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1850pF @ 20V

Võimsus - max : 48W

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : PowerPAK® SO-8 Dual

Tarnija seadme pakett : PowerPAK® SO-8 Dual

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQJ50 , SQJ500AE

dokumendid SQJ500AEP-T1_GE3

andmelehe : SQJ500AEP-T1_GE3.pdf

Seotud tooted SQJ500AEP-T1_GE3 Vishay Siliconix

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