NCP81075DR2G - HIGH PERFORMANCE DUAL MOS

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NCP81075DR2G

Sisemine osa number

ABC-NCP81075DR2G

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ON Semiconductor

Lühikirjeldus

HIGH PERFORMANCE DUAL MOS

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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691236 Pieces

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~~USD 0.5265~~

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ABC Semiconductor on NCP81075DR2G laos müüa.

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spetsifikatsioonid NCP81075DR2G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NCP81075DR2G

tootja : ON Semiconductor

kirjeldus : HIGH PERFORMANCE DUAL MOS

seeria : -

Osa olek : Active

Ajendatud konfiguratsioon : High-Side or Low-Side

Kanali tüüp : Independent

Autojuhtide arv : 2

Värava tüüp : N-Channel MOSFET

Pinge - toide : 8.5V ~ 20V

Loogikapinge - VIL, VIH : 0.8V, 2.7V

Praegune - tippvõimsus (allikas, valamu) : 4A, 4A

Sisendi tüüp : Non-Inverting

Kõrge külgpinge - max (alglaadimine) : 200V

Tõusu / languse aeg (tüüp) : 8ns, 7ns

Töötemperatuur : -40°C ~ 140°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SOIC

kaal : -

tingimus : Uus ja originaal

seotud lingid : NCP8 , NCP810

dokumendid NCP81075DR2G

andmelehe : NCP81075DR2G.pdf

Seotud tooted NCP81075DR2G ON Semiconductor

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