SISS40DN-T1-GE3 - MOSFET N-CH 100V 36.5A PPAK 1212

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SISS40DN-T1-GE3

Sisemine osa number

ABC-SISS40DN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 100V 36.5A PPAK 1212

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1108814 Pieces

Viide Hind

~~USD 0.2952~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SISS40DN-T1-GE3 laos müüa.

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spetsifikatsioonid SISS40DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SISS40DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 100V 36.5A PPAK 1212

seeria : ThunderFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 36.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 21 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 24nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 845pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 3.7W (Ta), 52W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8S (3.3x3.3)

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : SISS4 , SISS40D

dokumendid SISS40DN-T1-GE3

andmelehe : SISS40DN-T1-GE3.pdf

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