IXFX26N120P - MOSFET N-CH 1200V 26A PLUS247

Tootja arv

IXFX26N120P

Sisemine osa number

ABC-IXFX26N120P

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 1200V 26A PLUS247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

57473 Pieces

Viide Hind

~~USD 10.574~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFX26N120P laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFX26N120P

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFX26N120P

tootja : IXYS

kirjeldus : MOSFET N-CH 1200V 26A PLUS247

seeria : HiPerFET™, PolarP2™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 1200V

Praegune - pidev äravool (id) @ 25 ° C : 26A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 500 mOhm @ 13A, 10V

Vgs (th) (maksimaalselt) @ id : 6.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 225nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 16000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 960W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PLUS247™-3

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFX2

dokumendid IXFX26N120P

andmelehe : IXFX26N120P.pdf

Seotud tooted IXFX26N120P IXYS

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