SIHU4N80E-GE3 - MOSFET N-CHAN 800V TO-251

Tootja arv

SIHU4N80E-GE3

Sisemine osa number

ABC-SIHU4N80E-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CHAN 800V TO-251

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

296212 Pieces

Viide Hind

~~USD 1.105~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIHU4N80E-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIHU4N80E-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHU4N80E-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CHAN 800V TO-251

seeria : E

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 4.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.27 Ohm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 32nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 622pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 69W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : IPAK (TO-251)

Pakett / kohver : TO-251-3 Long Leads, IPak, TO-251AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHU , SIHU4N

dokumendid SIHU4N80E-GE3

andmelehe : SIHU4N80E-GE3.pdf

Seotud tooted SIHU4N80E-GE3 Vishay Siliconix

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