SI7456DP-T1-GE3 - MOSFET N-CH 100V 5.7A PPAK SO-8

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SI7456DP-T1-GE3

Sisemine osa number

ABC-SI7456DP-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 100V 5.7A PPAK SO-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

738997 Pieces

Viide Hind

~~USD 0.44293~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI7456DP-T1-GE3 laos müüa.

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spetsifikatsioonid SI7456DP-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7456DP-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 100V 5.7A PPAK SO-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 5.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 25 mOhm @ 9.3A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 44nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.9W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SO-8

Pakett / kohver : PowerPAK® SO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI745 , SI7456D

dokumendid SI7456DP-T1-GE3

andmelehe : SI7456DP-T1-GE3.pdf

Seotud tooted SI7456DP-T1-GE3 Vishay Siliconix

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