SIS778DN-T1-GE3 - MOSFET N-CH 30V 35A POWERPAK1212

Tootja arv

SIS778DN-T1-GE3

Sisemine osa number

ABC-SIS778DN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 35A POWERPAK1212

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

40846 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIS778DN-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIS778DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIS778DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 35A POWERPAK1212

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 35A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 5 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 42.5nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1390pF @ 15V

FET funktsioon : Schottky Diode (Body)

Võimsuse hajumine (max) : 52W (Tc)

Töötemperatuur : -50°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8

Pakett / kohver : PowerPAK® 1212-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIS77 , SIS778D

dokumendid SIS778DN-T1-GE3

andmelehe : SIS778DN-T1-GE3.pdf

Seotud tooted SIS778DN-T1-GE3 Vishay Siliconix

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