STH110N10F7-2 - MOSFET N CH 100V 110A H2PAK

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STH110N10F7-2

Sisemine osa number

ABC-STH110N10F7-2

tootja

STMicroelectronics

Lühikirjeldus

MOSFET N CH 100V 110A H2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

383222 Pieces

Viide Hind

~~USD 0.854125~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on STH110N10F7-2 laos müüa.

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spetsifikatsioonid STH110N10F7-2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : STH110N10F7-2

tootja : STMicroelectronics

kirjeldus : MOSFET N CH 100V 110A H2PAK

seeria : DeepGATE™, STripFET™ VII

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 110A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 6.5 mOhm @ 55A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 72nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5117pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 150W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : H2Pak-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : STH1 , STH110

dokumendid STH110N10F7-2

andmelehe : STH110N10F7-2.pdf

Seotud tooted STH110N10F7-2 STMicroelectronics

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