FDB16AN08A0 - MOSFET N-CH 75V 58A TO-263AB

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FDB16AN08A0

Sisemine osa number

ABC-FDB16AN08A0

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 75V 58A TO-263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

519897 Pieces

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~~USD 0.62959~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDB16AN08A0 laos müüa.

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spetsifikatsioonid FDB16AN08A0

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB16AN08A0

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 75V 58A TO-263AB

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 75V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Ta), 58A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 16 mOhm @ 58A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 42nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1857pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 135W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB , FDB16

dokumendid FDB16AN08A0

andmelehe : FDB16AN08A0.pdf

Seotud tooted FDB16AN08A0 ON Semiconductor

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