AS4C512M8D3B-12BIN - IC DRAM 4G PARALLEL 78FBGA

Tootja arv

AS4C512M8D3B-12BIN

Sisemine osa number

ABC-AS4C512M8D3B-12BIN

tootja

Alliance Memory, Inc.

Lühikirjeldus

IC DRAM 4G PARALLEL 78FBGA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

68384 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on AS4C512M8D3B-12BIN laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid AS4C512M8D3B-12BIN

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : AS4C512M8D3B-12BIN

tootja : Alliance Memory, Inc.

kirjeldus : IC DRAM 4G PARALLEL 78FBGA

seeria : -

Osa olek : Preliminary

Mälu tüüp : Volatile

Mälu vorming : DRAM

Tehnoloogia : SDRAM - DDR3

Mälu suurus : 4Gb (512M x 8)

Kella sagedus : 800MHz

Kirjutage tsükli aeg - sõna, leht : 15ns

Juurdepääsu aeg : 20ns

Mäluliides : Parallel

Pinge - toide : 1.425V ~ 1.575V

Töötemperatuur : -40°C ~ 95°C (TC)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 78-VFBGA

Tarnija seadme pakett : 78-FBGA (9x10.5)

kaal : -

tingimus : Uus ja originaal

seotud lingid : AS4C51 , AS4C512M8

dokumendid AS4C512M8D3B-12BIN

andmelehe : AS4C512M8D3B-12BIN.pdf

Seotud tooted AS4C512M8D3B-12BIN Alliance Memory, Inc.

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