FDD4N60NZ - MOSFET N CH 600V 3.4A DPAK

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FDD4N60NZ

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ABC-FDD4N60NZ

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ON Semiconductor

Lühikirjeldus

MOSFET N CH 600V 3.4A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1623111 Pieces

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~~USD 0.201665~~

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ABC Semiconductor on FDD4N60NZ laos müüa.

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spetsifikatsioonid FDD4N60NZ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDD4N60NZ

tootja : ON Semiconductor

kirjeldus : MOSFET N CH 600V 3.4A DPAK

seeria : UniFET-II™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.5 Ohm @ 1.7A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10.8nC @ 10V

VG (maksimaalselt) : ±25V

Sisendmahtuvus (Ciss) (Max) @ Vds : 510pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 114W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDD , FDD4

dokumendid FDD4N60NZ

andmelehe : FDD4N60NZ.pdf

Seotud tooted FDD4N60NZ ON Semiconductor

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