IPD180N10N3GBTMA1 - MOSFET N-CH 100V 43A TO252-3

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IPD180N10N3GBTMA1

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ABC-IPD180N10N3GBTMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 43A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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1416982 Pieces

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~~USD 0.231~~

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ABC Semiconductor on IPD180N10N3GBTMA1 laos müüa.

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spetsifikatsioonid IPD180N10N3GBTMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD180N10N3GBTMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 43A TO252-3

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 43A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 18 mOhm @ 33A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 33µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 25nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1800pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 71W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD18 , IPD180N1

dokumendid IPD180N10N3GBTMA1

andmelehe : IPD180N10N3GBTMA1.pdf

Seotud tooted IPD180N10N3GBTMA1 Infineon Technologies

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