SI1405BDH-T1-GE3 - MOSFET P-CH 8V 1.6A SC-70-6

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SI1405BDH-T1-GE3

Sisemine osa number

ABC-SI1405BDH-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 8V 1.6A SC-70-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

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ABC Semiconductor on SI1405BDH-T1-GE3 laos müüa.

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spetsifikatsioonid SI1405BDH-T1-GE3

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1405BDH-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 8V 1.6A SC-70-6

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 8V

Praegune - pidev äravool (id) @ 25 ° C : 1.6A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 112 mOhm @ 2.8A, 4.5V

Vgs (th) (maksimaalselt) @ id : 950mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 5.5nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 305pF @ 4V

FET funktsioon : -

Võimsuse hajumine (max) : 1.47W (Ta), 2.27W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-70-6 (SOT-363)

Pakett / kohver : 6-TSSOP, SC-88, SOT-363

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI140 , SI1405BD

dokumendid SI1405BDH-T1-GE3

andmelehe : SI1405BDH-T1-GE3.pdf

Seotud tooted SI1405BDH-T1-GE3 Vishay Siliconix

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