DMN1019USN-13 - MOSFET N-CH 12V 9.3A SC59

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DMN1019USN-13

Sisemine osa number

ABC-DMN1019USN-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 12V 9.3A SC59

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4982488 Pieces

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~~USD 0.065695~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN1019USN-13 laos müüa.

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spetsifikatsioonid DMN1019USN-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN1019USN-13

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 12V 9.3A SC59

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 9.3A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.2V, 2.5V

Rds sees (max) @ id, Vgs : 10 mOhm @ 9.7A, 4.5V

Vgs (th) (maksimaalselt) @ id : 800mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 50.6nC @ 8V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2426pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 680mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-59

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN1 , DMN101

dokumendid DMN1019USN-13

andmelehe : DMN1019USN-13.pdf

Seotud tooted DMN1019USN-13 Diodes Incorporated

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