DMN1054UCB4-7 - MOSFET N-CH 8V 2.7A X1-WLB0808-4

Tootja arv

DMN1054UCB4-7

Sisemine osa number

ABC-DMN1054UCB4-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 8V 2.7A X1-WLB0808-4

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2279417 Pieces

Viide Hind

~~USD 0.1436~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN1054UCB4-7 laos müüa.

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spetsifikatsioonid DMN1054UCB4-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN1054UCB4-7

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 8V 2.7A X1-WLB0808-4

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 8V

Praegune - pidev äravool (id) @ 25 ° C : 2.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.2V, 4.5V

Rds sees (max) @ id, Vgs : 42 mOhm @ 1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 700mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 4.5V

VG (maksimaalselt) : ±5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 908pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 740mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : X1-WLB0808-4

Pakett / kohver : 4-XFBGA, WLBGA

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN1 , DMN105

dokumendid DMN1054UCB4-7

andmelehe : DMN1054UCB4-7.pdf

Seotud tooted DMN1054UCB4-7 Diodes Incorporated

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