IRFHM4226TRPBF - MOSFET N CH 25V 28A PQFN

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IRFHM4226TRPBF

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ABC-IRFHM4226TRPBF

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N CH 25V 28A PQFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

70592 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFHM4226TRPBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFHM4226TRPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFHM4226TRPBF

tootja : Infineon Technologies

kirjeldus : MOSFET N CH 25V 28A PQFN

seeria : HEXFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 28A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 2.2 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2.1V @ 50µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 32nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2000pF @ 13V

FET funktsioon : -

Võimsuse hajumine (max) : 2.7W (Ta), 39W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : -

Pakett / kohver : 8-TQFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFH , IRFHM42

dokumendid IRFHM4226TRPBF

andmelehe : IRFHM4226TRPBF.pdf

Seotud tooted IRFHM4226TRPBF Infineon Technologies

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