SI1026X-T1-GE3 - MOSFET 2N-CH 60V 0.305A SC89-6

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SI1026X-T1-GE3

Sisemine osa number

ABC-SI1026X-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 60V 0.305A SC89-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3933713 Pieces

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~~USD 0.08321~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI1026X-T1-GE3 laos müüa.

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spetsifikatsioonid SI1026X-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1026X-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 60V 0.305A SC89-6

seeria : -

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 305mA

Rds sees (max) @ id, Vgs : 1.4 Ohm @ 500mA, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.6nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 30pF @ 25V

Võimsus - max : 250mW

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-563, SOT-666

Tarnija seadme pakett : SC-89-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI10 , SI1026X

dokumendid SI1026X-T1-GE3

andmelehe : SI1026X-T1-GE3.pdf

Seotud tooted SI1026X-T1-GE3 Vishay Siliconix

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