SQD100N04-3M6_GE3 - MOSFET N-CH 40V 100A TO252AA

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SQD100N04-3M6_GE3

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ABC-SQD100N04-3M6_GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 40V 100A TO252AA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

839685 Pieces

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~~USD 0.389815~~

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ABC Semiconductor on SQD100N04-3M6_GE3 laos müüa.

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spetsifikatsioonid SQD100N04-3M6_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQD100N04-3M6_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 40V 100A TO252AA

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.6 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 105nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6700pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 136W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252AA

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQD10 , SQD100N0

dokumendid SQD100N04-3M6_GE3

andmelehe : SQD100N04-3M6_GE3.pdf

Seotud tooted SQD100N04-3M6_GE3 Vishay Siliconix

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