DGD2190S8-13 - IC GATE DRVR HALF-BRIDGE 8SO

Tootja arv

DGD2190S8-13

Sisemine osa number

ABC-DGD2190S8-13

tootja

Diodes Incorporated

Lühikirjeldus

IC GATE DRVR HALF-BRIDGE 8SO

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

795921 Pieces

Viide Hind

~~USD 0.45725~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DGD2190S8-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DGD2190S8-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DGD2190S8-13

tootja : Diodes Incorporated

kirjeldus : IC GATE DRVR HALF-BRIDGE 8SO

seeria : -

Osa olek : Not For New Designs

Ajendatud konfiguratsioon : Half-Bridge

Kanali tüüp : Independent

Autojuhtide arv : 2

Värava tüüp : IGBT, N-Channel MOSFET

Pinge - toide : 10V ~ 20V

Loogikapinge - VIL, VIH : 0.8V, 2.5V

Praegune - tippvõimsus (allikas, valamu) : 4.5A, 4.5A

Sisendi tüüp : Non-Inverting

Kõrge külgpinge - max (alglaadimine) : 600V

Tõusu / languse aeg (tüüp) : 25ns, 20ns

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SO

kaal : -

tingimus : Uus ja originaal

seotud lingid : DGD2 , DGD219

dokumendid DGD2190S8-13

andmelehe : DGD2190S8-13.pdf

Seotud tooted DGD2190S8-13 Diodes Incorporated

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