DMG10N60SCT - MOSFET N-CH 600V 12A TO220AB

Tootja arv

DMG10N60SCT

Sisemine osa number

ABC-DMG10N60SCT

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 600V 12A TO220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

462770 Pieces

Viide Hind

~~USD 0.7073~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMG10N60SCT laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMG10N60SCT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMG10N60SCT

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 600V 12A TO220AB

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 750 mOhm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 35nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1587pF @ 16V

FET funktsioon : -

Võimsuse hajumine (max) : 178W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMG , DMG10

dokumendid DMG10N60SCT

andmelehe : DMG10N60SCT.pdf

Seotud tooted DMG10N60SCT Diodes Incorporated

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