EPC2105ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Tootja arv

EPC2105ENG

Sisemine osa number

ABC-EPC2105ENG

tootja

EPC

Lühikirjeldus

GAN TRANS 2N-CH 80V BUMPED DIE

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

52897 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on EPC2105ENG laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid EPC2105ENG

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EPC2105ENG

tootja : EPC

kirjeldus : GAN TRANS 2N-CH 80V BUMPED DIE

seeria : eGaN®

Osa olek : Discontinued at Digi-Key

FET tüüp : 2 N-Channel (Half Bridge)

FET funktsioon : GaNFET (Gallium Nitride)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 9.5A, 38A

Rds sees (max) @ id, Vgs : 14.5 mOhm @ 20A, 5V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 2.5mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 2.5nC @ 5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 300pF @ 40V

Võimsus - max : -

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : Die

Tarnija seadme pakett : Die

kaal : -

tingimus : Uus ja originaal

seotud lingid : EPC , EPC21

dokumendid EPC2105ENG

andmelehe : EPC2105ENG.pdf

Seotud tooted EPC2105ENG EPC

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