TK31V60X,LQ - MOSFET N-CH 600V 30.8A 5DFN

Tootja arv

TK31V60X,LQ

Sisemine osa number

ABC-TK31V60X,LQ

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N-CH 600V 30.8A 5DFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

268429 Pieces

Viide Hind

~~USD 1.2194~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK31V60X,LQ laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TK31V60X,LQ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK31V60X,LQ

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N-CH 600V 30.8A 5DFN

seeria : DTMOSIV-H

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 30.8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 98 mOhm @ 9.4A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 1.5mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 65nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3000pF @ 300V

FET funktsioon : Super Junction

Võimsuse hajumine (max) : 240W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-DFN-EP (8x8)

Pakett / kohver : 4-VSFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK3 , TK31V

dokumendid TK31V60X,LQ

andmelehe : TK31V60X,LQ.pdf

Seotud tooted TK31V60X,LQ Toshiba Semiconductor and Storage

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