DMG6602SVTX-7 - MOSFET BVDSS 25V-30V TSOT26 TR

Tootja arv

DMG6602SVTX-7

Sisemine osa number

ABC-DMG6602SVTX-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 25V-30V TSOT26 TR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

5414801 Pieces

Viide Hind

~~USD 0.06045~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMG6602SVTX-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMG6602SVTX-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMG6602SVTX-7

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 25V-30V TSOT26 TR

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N and P-Channel Complementary

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A (Ta), 2.8A (Ta)

Rds sees (max) @ id, Vgs : 60 mOhm @ 3.1A, 10V, 95 mOhm @ 2.7A, 10V

Vgs (th) (maksimaalselt) @ id : 2.3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 13nC @ 10V, 9nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 400pF @ 15V, 420pF @ 15V

Võimsus - max : 840mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

Tarnija seadme pakett : TSOT-26

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMG6 , DMG660

dokumendid DMG6602SVTX-7

andmelehe : DMG6602SVTX-7.pdf

Seotud tooted DMG6602SVTX-7 Diodes Incorporated

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