IRFB17N20D - MOSFET N-CH 200V 16A TO-220AB

Tootja arv

IRFB17N20D

Sisemine osa number

ABC-IRFB17N20D

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 200V 16A TO-220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

101528 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFB17N20D laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFB17N20D

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFB17N20D

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 200V 16A TO-220AB

seeria : HEXFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 16A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 170 mOhm @ 9.8A, 10V

Vgs (th) (maksimaalselt) @ id : 5.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 50nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1100pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 140W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRF , IRFB1

dokumendid IRFB17N20D

andmelehe : IRFB17N20D.pdf

Seotud tooted IRFB17N20D Infineon Technologies

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