CDBGBSC201200-G - DIODE DUAL SILICON CARBIDE POWER

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE DUAL SILICON CARBIDE POWER
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
61992 Pieces
Viide Hind
USD 6.78699
Meie hind
- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on CDBGBSC201200-G laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid CDBGBSC201200-G

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : CDBGBSC201200-G
tootja : Comchip Technology
kirjeldus : DIODE DUAL SILICON CARBIDE POWER
seeria : -
Osa olek : Active
Dioodi seadistamine : 1 Pair Common Cathode
Dioodi tüüp : Silicon Carbide Schottky
Pinge - tagurpidi alalisvool (Vr) (max) : 1200V
Praegune - keskmine puhastatud (Io) (dioodi kohta) : 25.9A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.8V @ 10A
Kiirus : No Recovery Time > 500mA (Io)
Vastupidine taastumisaeg (trr) : 0ns
Praegune - vastupidine leke @ Vr : 100µA @ 1200V
Töötemperatuur - ristmik : -55°C ~ 175°C
Paigaldus tüüp : Through Hole
Pakett / kohver : TO-247-3
Tarnija seadme pakett : TO-247
kaal : -
tingimus : Uus ja originaal
seotud lingid : CDBGB , CDBGBSC

dokumendid CDBGBSC201200-G

andmelehe : CDBGBSC201200-G.pdf

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