IPP80R900P7XKSA1 - MOSFET N-CH 800V 6A TO220-3

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IPP80R900P7XKSA1

Sisemine osa number

ABC-IPP80R900P7XKSA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 800V 6A TO220-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

385084 Pieces

Viide Hind

~~USD 0.85~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPP80R900P7XKSA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPP80R900P7XKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPP80R900P7XKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 800V 6A TO220-3

seeria : CoolMOS™ P7

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 6A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 900 mOhm @ 2.2A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 110µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 350pF @ 500V

FET funktsioon : -

Võimsuse hajumine (max) : 45W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPP80 , IPP80R90

dokumendid IPP80R900P7XKSA1

andmelehe : IPP80R900P7XKSA1.pdf

Seotud tooted IPP80R900P7XKSA1 Infineon Technologies

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