TK100E08N1,S1X - MOSFET N-CH 80V 100A TO220

Tootja arv

TK100E08N1,S1X

Sisemine osa number

ABC-TK100E08N1,S1X

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N-CH 80V 100A TO220

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

133592 Pieces

Viide Hind

~~USD 2.8~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK100E08N1,S1X laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TK100E08N1,S1X

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK100E08N1,S1X

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N-CH 80V 100A TO220

seeria : U-MOSVIII-H

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.2 mOhm @ 50A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 130nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 9000pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 255W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK10 , TK100E0

dokumendid TK100E08N1,S1X

andmelehe : TK100E08N1,S1X.pdf

Seotud tooted TK100E08N1,S1X Toshiba Semiconductor and Storage

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