FDD18N20LZ - MOSFET N-CH 200V DPAK-3

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FDD18N20LZ

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ABC-FDD18N20LZ

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 200V DPAK-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

832006 Pieces

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~~USD 0.393415~~

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ABC Semiconductor on FDD18N20LZ laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid FDD18N20LZ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDD18N20LZ

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 200V DPAK-3

seeria : UniFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 16A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 125 mOhm @ 8A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 40nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1575pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 89W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDD , FDD18

dokumendid FDD18N20LZ

andmelehe : FDD18N20LZ.pdf

Seotud tooted FDD18N20LZ ON Semiconductor

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