IAUC120N04S6N009ATMA1 - MOSFET N-CH 40V 120A PG-HSOG-8

Tootja arv

IAUC120N04S6N009ATMA1

Sisemine osa number

ABC-IAUC120N04S6N009ATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 40V 120A PG-HSOG-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

506968 Pieces

Viide Hind

~~USD 0.645645~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IAUC120N04S6N009ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IAUC120N04S6N009ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IAUC120N04S6N009ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 40V 120A PG-HSOG-8

seeria : Automotive, AEC-Q101, OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 7V, 10V

Rds sees (max) @ id, Vgs : 0.9 mOhm @ 60A, 10V

Vgs (th) (maksimaalselt) @ id : 3.4V @ 90µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 115nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7360pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 150W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IAUC120 , IAUC120N04

dokumendid IAUC120N04S6N009ATMA1

andmelehe : IAUC120N04S6N009ATMA1.pdf

Seotud tooted IAUC120N04S6N009ATMA1 Infineon Technologies

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