DMT3011LDT-7 - MOSFET 2N-CH 30V 8A V-DFN3030-8

Tootja arv

DMT3011LDT-7

Sisemine osa number

ABC-DMT3011LDT-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET 2N-CH 30V 8A V-DFN3030-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1620892 Pieces

Viide Hind

~~USD 0.20194~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMT3011LDT-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMT3011LDT-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMT3011LDT-7

tootja : Diodes Incorporated

kirjeldus : MOSFET 2N-CH 30V 8A V-DFN3030-8

seeria : -

Osa olek : Active

FET tüüp : 2 N-Channel (Dual) Asymmetrical

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 8A, 10.7A

Rds sees (max) @ id, Vgs : 20 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 13.2nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 641pF @ 15V

Võimsus - max : 1.9W

Töötemperatuur : -55°C ~ 155°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-VDFN Exposed Pad

Tarnija seadme pakett : V-DFN3030-8 (Type K)

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMT3 , DMT301

dokumendid DMT3011LDT-7

andmelehe : DMT3011LDT-7.pdf

Seotud tooted DMT3011LDT-7 Diodes Incorporated

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