SQ3426EV-T1_GE3 - MOSFET N-CHANNEL 60V 7A 6TSOP

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SQ3426EV-T1_GE3

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ABC-SQ3426EV-T1_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CHANNEL 60V 7A 6TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2145682 Pieces

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~~USD 0.15255~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SQ3426EV-T1_GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid SQ3426EV-T1_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQ3426EV-T1_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CHANNEL 60V 7A 6TSOP

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 42 mOhm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 4.5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 720pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 5W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-TSOP

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQ342 , SQ3426E

dokumendid SQ3426EV-T1_GE3

andmelehe : SQ3426EV-T1_GE3.pdf

Seotud tooted SQ3426EV-T1_GE3 Vishay Siliconix

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