SI1032X-T1-GE3 - MOSFET N-CH 20V 200MA SC89-3

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SI1032X-T1-GE3

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ABC-SI1032X-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 20V 200MA SC89-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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4273164 Pieces

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~~USD 0.0766~~

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ABC Semiconductor on SI1032X-T1-GE3 laos müüa.

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spetsifikatsioonid SI1032X-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1032X-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 20V 200MA SC89-3

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 200mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.5V, 4.5V

Rds sees (max) @ id, Vgs : 5 Ohm @ 200mA, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.75nC @ 4.5V

VG (maksimaalselt) : ±6V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 300mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-89-3

Pakett / kohver : SC-89, SOT-490

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI10 , SI1032X

dokumendid SI1032X-T1-GE3

andmelehe : SI1032X-T1-GE3.pdf

Seotud tooted SI1032X-T1-GE3 Vishay Siliconix

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