BSC019N02KSGAUMA1 - MOSFET N-CH 20V 100A TDSON-8

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BSC019N02KSGAUMA1

Sisemine osa number

ABC-BSC019N02KSGAUMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 20V 100A TDSON-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

656894 Pieces

Viide Hind

~~USD 0.498285~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSC019N02KSGAUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSC019N02KSGAUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSC019N02KSGAUMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 20V 100A TDSON-8

seeria : OptiMOS™

Osa olek : Not For New Designs

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Ta), 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 1.95 mOhm @ 50A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.2V @ 350µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 85nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 13000pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 2.8W (Ta), 104W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSC01 , BSC019N0

dokumendid BSC019N02KSGAUMA1

andmelehe : BSC019N02KSGAUMA1.pdf

Seotud tooted BSC019N02KSGAUMA1 Infineon Technologies

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