SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Tootja arv

SCTW90N65G2V

Sisemine osa number

ABC-SCTW90N65G2V

tootja

STMicroelectronics

Lühikirjeldus

SILICON CARBIDE POWER MOSFET 650

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

49696 Pieces

Viide Hind

~~USD 30.075~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SCTW90N65G2V laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SCTW90N65G2V

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SCTW90N65G2V

tootja : STMicroelectronics

kirjeldus : SILICON CARBIDE POWER MOSFET 650

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : SiCFET (Silicon Carbide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 90A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 18V

Rds sees (max) @ id, Vgs : 25 mOhm @ 50A, 18V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 157nC @ 18V

VG (maksimaalselt) : +22V, -10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3300pF @ 400V

FET funktsioon : -

Võimsuse hajumine (max) : 390W (Tc)

Töötemperatuur : -55°C ~ 200°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : HiP247™

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SCTW , SCTW90

dokumendid SCTW90N65G2V

andmelehe : SCTW90N65G2V.pdf

Seotud tooted SCTW90N65G2V STMicroelectronics

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