RJK1003DPN-E0#T2 - MOSFET N-CH 100V 50A TO220

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RJK1003DPN-E0#T2

Sisemine osa number

ABC-RJK1003DPN-E0#T2

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 100V 50A TO220

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

464814 Pieces

Viide Hind

~~USD 0.7042~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RJK1003DPN-E0#T2 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid RJK1003DPN-E0#T2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJK1003DPN-E0#T2

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 100V 50A TO220

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 50A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 11 mOhm @ 25A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 59nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4150pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 125W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJK10 , RJK1003D

dokumendid RJK1003DPN-E0#T2

andmelehe : RJK1003DPN-E0#T2.pdf

Seotud tooted RJK1003DPN-E0#T2 Renesas Electronics America

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