FDC855N - MOSFET N-CH 30V 6.1A 6-SSOT

Tootja arv

FDC855N

Sisemine osa number

ABC-FDC855N

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 30V 6.1A 6-SSOT

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2778286 Pieces

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~~USD 0.117815~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDC855N laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid FDC855N

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDC855N

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 30V 6.1A 6-SSOT

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 6.1A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 27 mOhm @ 6.1A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 13nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 655pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 1.6W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SuperSOT™-6

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : FD , FDC

dokumendid FDC855N

andmelehe : FDC855N.pdf

Seotud tooted FDC855N ON Semiconductor

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